STP20NE06 - ST

STP20NE06 N-CHANNEL 60V - 0.06 OHM - 20A TO-220/TO-220FP STRIPFET POWER MOSFET

This Power Mosfet is the latest development of STMicroelectronics unique ” Single Feature Size™ ” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s HIGH CURRENT, HIGH SP.

Features

• ) P tot V ISO dv/dt Ts tg Tj June 1999 Parameter Drain-source Voltage (VGS = 0) Drain- gate Voltage (RGS = 20 k Ω ) Gate-source Voltage Drain Current (continuous) at T c = 25 o C Drain Current (continuous) at T c = 100 oC Drain Current (pulsed) Total Dissipation at T c = 25 oC Derating F actor Insulation Withstand Voltage (DC) Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature 20 14 80 70 0.47  7 -65 to 175 175 ( 1) ISD ≤ 20 A, di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX Value STP20NE06 STP20NE06FP 60 60 ± 20 13 9 80 30 0.2 2000 Un it V V V A A A W.