STP20N10LFI - ST Microelectronics

STP20N10LFI N-CHANNEL POWER MOSFET

STP20N10L STP20N10LFI N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TYPE STP20N10L STP20N10LFI s s s s s s s s s V DSS 100 V 100 V R DS( on) < 0.12 Ω < 0.12 Ω ID 20 A 12 A TYPICAL RDS(on) = 0.09 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE HIGH CURRENT CAPABILITY 175oC OPERATING .

Features

oC Drain Current (pulsed) Total Dissipation at Tc = 25 C Derating Factor Insulation Withstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature o o Value STP20N10LFI 100 100 ± 15 20 14 80 105 0.7  -65 to 175 175 12 8 80 40 0.27 2000 Unit V V V A A A W W/o C V o o C C (
•) Pulse width limited by safe operating area November 1996 1/10 STP20N10L/FI THERMAL DATA TO-220 R thj-cas e Rthj- amb Rt hc- sin k Tl Thermal Resistance Junction-case Max 1.43 62.5 0.5 300 ISOWATT220 3.75 o o o C/W C/W C/W o C Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ.