STP20N06FI - ST Microelectronics

STP20N06FI N-CHANNEL POWER MOSFET

STP20N06 STP20N06FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP20N06 STP20N06FI s s s s s s s s V DSS 60 V 60 V R DS( on) < 0.085 Ω < 0.085 Ω ID 20 A 13 A TYPICAL RDS(on) = 0.06 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE HIGH CURRENT CAPABILITY 175oC OPERATING TEMPERATURE APPLICAT.

Features

= 25 C Derating Factor Insulation Withstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature o o Value STP20N06FI 60 60 ± 20 20 14 80 80 0.53  -65 to 175 175 13 9 80 35 0.23 2000 Unit V V V A A A W W/o C V o o C C (
•) Pulse width limited by safe operating area December 1996 1/10 STP20N06/FI THERMAL DATA TO-220 R thj-cas e Rthj- amb Rt hc- sin k Tl Thermal Resistance Junction-case Max 1.88 62.5 0.5 300 ISOWATT220 4.29 o o o C/W C/W C/W o C Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose AVALA.