STP20N95K5 - STMicroelectronics

STP20N95K5 N-channel Power MOSFET

These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. Order code STB20N95K5 STF20N95K5 STP20N95K5 STW20N95K5 Table 1: D.

Features

Order code STB20N95K5 STF20N95K5 STP20N95K5 STW20N95K5 VDS 950 V RDS(on) max. 0.330 Ω ID 17.5 A PTOT 250 W 40 W 250 W
 Industry’s lowest RDS(on) x area
 Industry’s best FoM (figure of merit)
 Ultra-low gate charge
 100% avalanche tested
 Zener-protected Applications
 Switching applications Description These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high effi.