STP19NM50N - STMicroelectronics

STP19NM50N N-channel Power MOSFETs

These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. $0Y Order cod.

Features

Order codes VDS @ TJmax STF19NM50N STP19NM50N 550 V STW19NM50N RDS(on) max 0.25 Ω ID 14 A
• 100% avalanche tested
• Low input capacitance and gate charge
• Low gate input resistance Applications
• Switching applications '7$%
* 6 Description These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. $.