This series of devices implements the second generation of MDmesh™ Technology. This revolutionary Power MOSFET associates a new vertical structure to the Company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters Table 1. Device summary Order codes STI1.
Type STB19NM65N STF19NM65N STI19NM65N STP19NM65N STW19NM65N VDSS (@Tjmax) 710 V 710 V 710 V 710 V 710 V RDS(on) max < 0.27 Ω < 0.27 Ω < 0.27 Ω < 0.27 Ω < 0.27 Ω ID
3
15.5 A 15.5 A(1) 15.5 A 15.5 A 15.5 A
1
2
3 12
TO-220
3 1 2
I²PAK
TO-220FP
3 1
2 3
1. Limited only by maximum temperature allowed
■
■
■
100% avalanche tested Low input capacitance and gate charge Low gate input resistance
D²PAK
1
TO-247
Figure 1.
Internal schematic diagram
Application
■
Switching applications
Description
This series of devices implements the second generation of MDmesh™ Technology. This revolution.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | STP19NM50N |
STMicroelectronics |
N-channel Power MOSFETs | |
2 | STP19NM50N |
INCHANGE |
N-Channel MOSFET | |
3 | STP19N06 |
ST Microelectronics |
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR | |
4 | STP19N06FI |
ST Microelectronics |
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR | |
5 | STP19N06L |
ST Microelectronics |
N-CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR | |
6 | STP19N06LFI |
ST Microelectronics |
N-CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR | |
7 | STP19N20 |
ST Microelectronics |
N-CHANNEL POWER MOSFETS | |
8 | STP19NB20 |
ST Microelectronics |
N-CHANNEL MOSFET | |
9 | STP19NB20FP |
ST Microelectronics |
N-CHANNEL MOSFET | |
10 | STP19NF20 |
STMicroelectronics |
N-CHANNEL POWER MOSFET | |
11 | STP190N55LF3 |
STMicroelectronics |
N-CHANNEL POWER MOSFET | |
12 | STP190NF04 |
ST Microelectronics |
N-CHANNEL POWER MOSFET |