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STP19NM50N |
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| Part Number | STP19NM50N |
| Manufacturer | INCHANGE |
| Description | isc N-Channel Mosfet Transistor ·FEATURES ·Drain Current ID= 14A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robus... |
| Features |
·Drain Current ID= 14A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 500 V VGS Gate-Source Voltage ±25 V ID Drain Current-continuous@ TC=25℃ 14 A IDM Pulse Drain Current 56 A Ptot Total Dissipation@TC=25℃ 110 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ ·THERMAL CHA... |
| Document |
 STP19NM50N Data Sheet
PDF 254.18KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | STP19NM50N |
STMicroelectronics |
N-channel Power MOSFETs |
|
| 2 | STP19NM65N |
STMicroelectronics |
Power MOSFET |
|
| 3 | STP19N06 |
ST Microelectronics |
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
|
| 4 | STP19N06FI |
ST Microelectronics |
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
|
| 5 | STP19N06L |
ST Microelectronics |
N-CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR |
|