www.DataSheet4U.com STP19N06 STP19N06FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP19N06 STP19N06FI s s s s s s s s V DSS 60 V 60 V R DS( on) < 0.1 Ω < 0.1 Ω ID 19 A 13 A TYPICAL RDS(on) = 0.085 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE HIGH CURRENT CAPABILITY 175oC OPERATING TE.
Dissipation at Tc = 25 C Derating Factor Insulation Withstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature
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Value STP19N06FI 60 60 ± 20 19 13 76 80 0.53 -65 to 175 175 13 9 76 35 0.23 2000
Unit
V V V A A A W W/o C V
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C C
(
•) Pulse width limited by safe operating area
February 1995
1/10
STP19N06/FI
THERMAL DATA
TO-220 R thj-cas e Rthj- amb Rt hc- sin k Tl Thermal Resistance Junction-case Max 1.88 62.5 0.5 300 ISOWATT220 4.29
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C/W C/W C/W o C
Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Solderi.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | STP19N06FI |
ST Microelectronics |
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR | |
2 | STP19N06L |
ST Microelectronics |
N-CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR | |
3 | STP19N06LFI |
ST Microelectronics |
N-CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR | |
4 | STP19N20 |
ST Microelectronics |
N-CHANNEL POWER MOSFETS | |
5 | STP19NB20 |
ST Microelectronics |
N-CHANNEL MOSFET | |
6 | STP19NB20FP |
ST Microelectronics |
N-CHANNEL MOSFET | |
7 | STP19NF20 |
STMicroelectronics |
N-CHANNEL POWER MOSFET | |
8 | STP19NM50N |
STMicroelectronics |
N-channel Power MOSFETs | |
9 | STP19NM50N |
INCHANGE |
N-Channel MOSFET | |
10 | STP19NM65N |
STMicroelectronics |
Power MOSFET | |
11 | STP190N55LF3 |
STMicroelectronics |
N-CHANNEL POWER MOSFET | |
12 | STP190NF04 |
ST Microelectronics |
N-CHANNEL POWER MOSFET |