STP190NF04 - ST Microelectronics

STP190NF04 N-CHANNEL POWER MOSFET

This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s HIGH CURENT, HIGH SWITCH.

Features

C = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Single Pulse Avalanche Energy Storage Temperature Max. Operating Junction Temperature Value 40 40 ± 20 120 120 480 310 2.07 7 860 -55 to 175 (
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•) Pulse width limited by safe operating area. Unit V V V A A A W W/°C V/ns mJ °C EAS (1) Tstg Tj (
•) Current limited by package February 2004 1) ISD ≤190A, di/dt ≤600A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX 1/9 STB190NF04/-1 STP190NF04 THERMAL DATA Rthj-case Rthj-amb Tl Thermal Resistance Junction-case.