STP190N55LF3 - STMicroelectronics

STP190N55LF3 N-CHANNEL POWER MOSFET

This n-channel enhancement mode Power MOSFET is the latest refinement of STMicroelectronics' unique “single feature size” strip-based process, which has decreased the critical alignment steps, offering remarkable manufacturing reproducibility. The outcome is a transistor with extremely high packing density for low on resistance, rugged avalanche characteris.

Features

Type STP190N55LF3 VDSS 55 V RDS(on) max ID PD < 3.7 mΩ 120 A 312 W
■ Logic level drive
■ 100% avalanche tested Application
■ Switching applications
  – Automotive Description This n-channel enhancement mode Power MOSFET is the latest refinement of STMicroelectronics' unique “single feature size” strip-based process, which has decreased the critical alignment steps, offering remarkable manufacturing reproducibility. The outcome is a transistor with extremely high packing density for low on resistance, rugged avalanche characteristics and low gate charge. 3 2 1 TO-220 Figure 1. Interna.