STP190NF04 |
Part Number | STP190NF04 |
Manufacturer | STMicroelectronics (https://www.st.com/) |
Description | This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, ... |
Features |
C = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Single Pulse Avalanche Energy Storage Temperature Max. Operating Junction Temperature
Value 40 40 ± 20 120 120 480 310 2.07 7 860 -55 to 175 ( • •) Pulse width limited by safe operating area. Unit V V V A A A W W/°C V/ns mJ °C EAS (1) Tstg Tj ( •) Current limited by package February 2004 1) ISD ≤190A, di/dt ≤600A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX 1/9 STB190NF04/-1 STP190NF04 THERMAL DATA Rthj-case Rthj-amb Tl Thermal Resistance Junction-case... |
Document |
STP190NF04 Data Sheet
PDF 199.95KB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
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1 | STP190N55LF3 |
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2 | STP19N06 |
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3 | STP19N06FI |
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4 | STP19N06L |
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5 | STP19N06LFI |
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