STP190N55LF3 |
Part Number | STP190N55LF3 |
Manufacturer | STMicroelectronics (https://www.st.com/) |
Description | This n-channel enhancement mode Power MOSFET is the latest refinement of STMicroelectronics' unique “single feature size” strip-based process, which has decreased the critical alignment steps, offeri... |
Features |
Type STP190N55LF3
VDSS 55 V
RDS(on) max
ID
PD
< 3.7 mΩ 120 A 312 W
■ Logic level drive ■ 100% avalanche tested Application ■ Switching applications – Automotive Description This n-channel enhancement mode Power MOSFET is the latest refinement of STMicroelectronics' unique “single feature size” strip-based process, which has decreased the critical alignment steps, offering remarkable manufacturing reproducibility. The outcome is a transistor with extremely high packing density for low on resistance, rugged avalanche characteristics and low gate charge. 3 2 1 TO-220 Figure 1. Interna... |
Document |
STP190N55LF3 Data Sheet
PDF 625.01KB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | STP190NF04 |
ST Microelectronics |
N-CHANNEL POWER MOSFET | |
2 | STP19N06 |
ST Microelectronics |
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR | |
3 | STP19N06FI |
ST Microelectronics |
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR | |
4 | STP19N06L |
ST Microelectronics |
N-CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR | |
5 | STP19N06LFI |
ST Microelectronics |
N-CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR |