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This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. Order code STP100N8F6 Table 1: Device summary Marking 100N8F6 Package TO-220 Packing Tube February 2016 DocID026838 Rev 3 This is information on a product in full p.
Order code VDS STP100N8F6 80 V
RDS(on)max. 0.009 Ω
ID 100 A
PTOT 176 W
Very low on-resistance
Very low gate charge
High avalanche ruggedness
Low gate drive power loss
Applications
Switching applications
Description
This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.
Order code STP100N8F6
Table 1: Device summary Marking 100N8F6
Package TO-220
Packing Tube
February 2016
DocID026838 Rev 3
This is information on a product in full production.
.
STP100N8F6 - INCHANGE
Isc N-Channel MOSFET Transistor INCHANGE Semiconductor STP100N8F6 ·FEATURES ·Very low on-resistance ·Very low gate cha.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | STP100N10F7 |
STMicroelectronics |
N-channel Power MOSFET |
|
| 2 | STP100N10F7 |
INCHANGE |
TO-220C N-Channel MOSFET |
|
| 3 | STP100N10F7 |
INCHANGE |
TO-220 N-Channel MOSFET |
|
| 4 | STP100N6F7 |
STMicroelectronics |
N-CHANNEL POWER MOSFET |
|
| 5 | STP100N6F7 |
INCHANGE |
N-Channel MOSFET |
|
| 6 | STP100NF03L-03 |
ST Microelectronics |
N-channel Power MOSFET |
|
| 7 | STP100NF04 |
ST Microelectronics |
N-channel Power MOSFET |
|
| 8 | STP100NF04L |
ST Microelectronics |
N-channel Power MOSFET |
|
| 9 | STP1012 |
Sun Microsystems |
32-Bit Microprocessor |
|
| 10 | STP1013 |
Stanson Technology |
MOSFET |
|
| 11 | STP1030 |
SPARC |
High-Performance 64-Bit RISC Processor |
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| 12 | STP105N3LL |
STMicroelectronics |
N-channel Power MOSFET |
|