STP1013 - Stanson Technology

STP1013 MOSFET

STP1013 is the P-Channel enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power m.

Features

009. V1 STP1013 Dual P Channel Enhancement Mode MOSFET -0.45A ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted ) Parameter Symbol Typical Unit Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ=150℃) Pulsed Drain Current TA=25℃ TA=80℃ Continuous Source Current (Diode Conduction) Power Dissipation TA=25℃ TA=70℃ Operation Junction Temperature Storage Temperature Range VDSS VGSS ID IDM IS PD TJ TSTG -20 ±12 -0.45 -0.35 -1.0 -0.3 0.27 0.16 -55/150 -55/150 V V A A A W ℃ ℃ STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA http://www.sta.