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This device is an N-channel Power MOSFET th developed using the 6 generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. 6 $0Y Order code STP105N3LL Table 1. Device summary Marking Packages 105N3LL TO-220 Packaging Tube April 2014 This is information .
TAB
3 2 1
TO-220
Order code STP105N3LL
VDS 30 V
RDS(on) max. ID 3.5 mΩ 150 A
• RDS(on)
* Qg industry benchmark
• Extremely low on-resistance RDS(on)
• High avalanche ruggedness
• Low gate drive power losses
Figure 1. Internal schematic diagram
' Ć7$%
*
Applications
• Switching applications
Description
This device is an N-channel Power MOSFET
th
developed using the 6 generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages.
6
$0Y
Order code STP105N3LL
Table 1. Device summary
Marking.
STP105N3LL - INCHANGE
Isc N-Channel MOSFET Transistor ·FEATURES ·Typical RDS(on)=0.0027Ω ·With low gate drive requirements ·High avalanche rug.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | STP100N10F7 |
STMicroelectronics |
N-channel Power MOSFET |
|
| 2 | STP100N10F7 |
INCHANGE |
TO-220C N-Channel MOSFET |
|
| 3 | STP100N10F7 |
INCHANGE |
TO-220 N-Channel MOSFET |
|
| 4 | STP100N6F7 |
STMicroelectronics |
N-CHANNEL POWER MOSFET |
|
| 5 | STP100N6F7 |
INCHANGE |
N-Channel MOSFET |
|
| 6 | STP100N8F6 |
STMicroelectronics |
N-channel Power MOSFET |
|
| 7 | STP100N8F6 |
INCHANGE |
N-Channel MOSFET |
|
| 8 | STP100NF03L-03 |
ST Microelectronics |
N-channel Power MOSFET |
|
| 9 | STP100NF04 |
ST Microelectronics |
N-channel Power MOSFET |
|
| 10 | STP100NF04L |
ST Microelectronics |
N-channel Power MOSFET |
|
| 11 | STP1012 |
Sun Microsystems |
32-Bit Microprocessor |
|
| 12 | STP1013 |
Stanson Technology |
MOSFET |
|