This Power MOSFET is the latest development of STMicroelectronics unique “Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. Internal schematic diagram Applicat.
Type STP100NF04 STB100NF04
■
■
VDSS 40V 40V
RDS(on) < 0.0046Ω < 0.0046Ω
ID 120A 120A
Pw 300W 300W
3 1
1 2 3
Standard threshold drive 100% avalanche tested
D²PAK
TO-220
Description
This Power MOSFET is the latest development of STMicroelectronics unique “Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
Internal schematic diagram
Applications
■
Switching application
Order codes
Part numbe.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | STP100NF03L-03 |
ST Microelectronics |
N-channel Power MOSFET | |
2 | STP100NF04L |
ST Microelectronics |
N-channel Power MOSFET | |
3 | STP100N10F7 |
STMicroelectronics |
N-channel Power MOSFET | |
4 | STP100N10F7 |
INCHANGE |
TO-220C N-Channel MOSFET | |
5 | STP100N10F7 |
INCHANGE |
TO-220 N-Channel MOSFET | |
6 | STP100N6F7 |
STMicroelectronics |
N-CHANNEL POWER MOSFET | |
7 | STP100N6F7 |
INCHANGE |
N-Channel MOSFET | |
8 | STP100N8F6 |
STMicroelectronics |
N-channel Power MOSFET | |
9 | STP100N8F6 |
INCHANGE |
N-Channel MOSFET | |
10 | STP1012 |
Sun Microsystems |
32-Bit Microprocessor | |
11 | STP1013 |
Stanson Technology |
MOSFET | |
12 | STP1030 |
SPARC |
High-Performance 64-Bit RISC Processor |