This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. I2PAK Internal schematic diagram App.
Type STB100NF03L-03 STB100NF03L-03-1 STP100NF03L-03
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VDSS 30V 30V 30V
RDS(on) <0.0032Ω <0.0032Ω <0.0032Ω
ID 100A 100A 100A TO-220
1 2 3
3 1
D2PAK
Low threshold drive 100% avalanche tested Logic level device
3 12
Description
This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
I2PAK
Internal schematic diagram
Applic.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | STP100NF04 |
ST Microelectronics |
N-channel Power MOSFET | |
2 | STP100NF04L |
ST Microelectronics |
N-channel Power MOSFET | |
3 | STP100N10F7 |
STMicroelectronics |
N-channel Power MOSFET | |
4 | STP100N10F7 |
INCHANGE |
TO-220C N-Channel MOSFET | |
5 | STP100N10F7 |
INCHANGE |
TO-220 N-Channel MOSFET | |
6 | STP100N6F7 |
STMicroelectronics |
N-CHANNEL POWER MOSFET | |
7 | STP100N6F7 |
INCHANGE |
N-Channel MOSFET | |
8 | STP100N8F6 |
STMicroelectronics |
N-channel Power MOSFET | |
9 | STP100N8F6 |
INCHANGE |
N-Channel MOSFET | |
10 | STP1012 |
Sun Microsystems |
32-Bit Microprocessor | |
11 | STP1013 |
Stanson Technology |
MOSFET | |
12 | STP1030 |
SPARC |
High-Performance 64-Bit RISC Processor |