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STP100N8F6 |
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| Part Number | STP100N8F6 |
| Manufacturer | INCHANGE |
| Description | Isc N-Channel MOSFET Transistor INCHANGE Semiconductor STP100N8F6 ·FEATURES ·Very low on-resistance ·Very low gate charge ·High avalanche ruggedness ·Low gate drive power loss ·100% avalanche tested... |
| Features |
·Very low on-resistance ·Very low gate charge ·High avalanche ruggedness ·Low gate drive power loss ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 80 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous@TC=25℃ TC=100℃ Drain Current-Single Pulsed ±20 100 70 400 PD Total Dissipation 176 Tj Operating Junction Temperature -55~175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHAR... |
| Document |
 STP100N8F6 Data Sheet
PDF 200.94KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | STP100N8F6 |
STMicroelectronics |
N-channel Power MOSFET |
|
| 2 | STP100N10F7 |
STMicroelectronics |
N-channel Power MOSFET |
|
| 3 | STP100N10F7 |
INCHANGE |
TO-220C N-Channel MOSFET |
|
| 4 | STP100N10F7 |
INCHANGE |
TO-220 N-Channel MOSFET |
|
| 5 | STP100N6F7 |
STMicroelectronics |
N-CHANNEL POWER MOSFET |
|