STI45N10F7 - STMicroelectronics

STI45N10F7 N-CHANNEL POWER MOSFET

These devices utilize the 7th generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. 3 !-V Order codes STD45N10F7 STI45N10F7 STP45N10F7 Table 1. Device summary Marking Package 45N10F7 DPAK I2PAK TO-220 Packaging Tape and reel Tub.

Features

Order codes STD45N10F7 STI45N10F7 STP45N10F7 VDS RDS(on) max.(1) 100 V 0.018 Ω 1. @ VGS = 10 V
• Ultra low on-resistance
• 100% avalanche tested ID 45 A PTOT 60 W Applications
• Switching applications Description These devices utilize the 7th generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. 3 !-V Order codes STD45N10F7 STI45N10F7 STP45N10F7 Table 1. Device summary Marking Package 45N10F7 DPAK I2PAK TO-220 Packaging Tape and reel Tube October 2013 Th.