STI410N4F7AG - STMicroelectronics

STI410N4F7AG N-channel Power MOSFET

This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Obsolete S(3) AM01475v1_Tab Table 1: Device summary Order code Marking Package Packing STI410N4F7AG 410N4F7 .

Features

TAB Product(s)1 2 3 leteI²PAK bsoFigure 1: Internal schematic diagram ) - OD(2, TAB) Product(sG(1) Order code STI410N4F7AG VDS 40 V RDS(on) max. 1.8 mΩ ID 180 A PTOT 365 W
 Designed for automotive applications
 Among the lowest RDS(on) on the market
 Excellent FoM (figure of merit)
 Low Crss/Ciss ratio for EMI immunity
 High avalanche ruggedness Applications
 Switching applications Description This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and .