STI10NM60N - STMicroelectronics

STI10NM60N N-channel Power MOSFET

This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. olete POrder code Obs.

Features

TAB )1 2 3 t(sI2PAK roducFigure 1. Internal schematic diagram te P'7$% - Obsole
* roduct(s)6 $0Y Order code STI10NM60N VDS RDS(on) @TJmax max. 650 V < 0.55 Ω ID 10 A PTOT 70 W
• 100% avalanche tested
• Low input capacitance and gate charge
• Low gate input resistance Applications
• Switching applications Description This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate.