STI45N10F7 |
Part Number | STI45N10F7 |
Manufacturer | INCHANGE |
Description | ·Low Drain-Source On-Resistance APPLICATIONS ·Switching application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDSS Drain-Source Voltage VGS Gate-Source Voltage-Continuous ID Drain Cu... |
Features |
·Drain Current –ID= 45A@ TC=25℃ ·Drain Source Voltage- : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 18mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Low Drain-Source On-Resistance APPLICATIONS ·Switching application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDSS Drain-Source Voltage VGS Gate-Source Voltage-Continuous ID Drain Current-Continuous IDM Drain Current-Single Pluse PD Total Dissipation @TC=25℃ TJ Max. Operating Junction Temperature Tstg Storage Temperature ... |
Document |
STI45N10F7 Data Sheet
PDF 309.40KB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
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1 | STI45N10F7 |
STMicroelectronics |
N-CHANNEL POWER MOSFET | |
2 | STI400N4F6 |
STMicroelectronics |
N-channel Power MOSFET | |
3 | STI40N65M2 |
STMicroelectronics |
N-channel Power MOSFET | |
4 | STI410N4F7AG |
STMicroelectronics |
N-channel Power MOSFET | |
5 | STI42N65M5 |
ST Microelectronics |
N-Channel Power MOSFET |