STI100N10F7 - STMicroelectronics

STI100N10F7 N-Channel Power MOSFET

These N-channel Power MOSFETs utilize STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Product status links STB100N10F7 STD100N10F7 STF100N10F7 STI100N10F7 STP100N10F7 DS9291 - Rev 6 - March 2022 For f.

Features

Order codes VDS RDS(on) max. ID STB100N10F7 80 A STD100N10F7 80 A STF100N10F7 100 V 8.0 mΩ 45 A STI100N10F7 80 A STP100N10F7 80 A
• Among the lowest RDS(on) on the market
• Excellent FoM (figure of merit)
• Low Crss/Ciss ratio for EMI immunity
• High avalanche ruggedness Package D2PAK DPAK TO-220FP I2PAK TO-220 Applications
• Switching applications Description These N-channel Power MOSFETs utilize STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and.