These devices are made using the SuperMESH3™ Power MOSFET technology that is obtained via improvements applied to STMicroelectronics’ SuperMESH™ technology combined with a new optimized vertical structure. The resulting product has an extremely low on resistance, superior dynamic performance and high avalanche capability, making it especially suitable for th.
Type STB4N62K3 STF4N62K3 STI4N62K3 STP4N62K3
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VDSS
RDS(on) max
ID
Pw 70 W 25 W 70 W 70 W
1 3
1 2 3
620 V
< 1.95 Ω
D²PAK
3.8 A
TO-220FP
100% avalanche tested
3
Extremely high dv/dt capability Gate charge minimized Very low intrinsic capacitances Improved diode reverse recovery characteristics Zener-protected Figure 1.
I²PAK
3 12
1
2
TO-220
Application
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Internal schematic diagram
D(2)
Switching applications
Description
These devices are made using the SuperMESH3™ Power MOSFET technology that is obtained via improvements applied to STMicroelectronics’ SuperMESH™ tec.
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---|---|---|---|---|
1 | STI400N4F6 |
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2 | STI40N65M2 |
STMicroelectronics |
N-channel Power MOSFET | |
3 | STI410N4F7AG |
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N-channel Power MOSFET | |
4 | STI42N65M5 |
ST Microelectronics |
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5 | STI42N65M5 |
INCHANGE |
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6 | STI45N10F7 |
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7 | STI45N10F7 |
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8 | STI4600 |
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9 | STI47N60DM6AG |
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10 | STI100N10F7 |
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11 | STI1010 |
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