These devices are N-channel Power MOSFETs based on the MDmesh M5 innovative vertical process technology combined with the well-known PowerMESH horizontal layout. The resulting products offer extremely low on-resistance, making them particularly suitable for applications requiring high power and superior efficiency. Product status STB42N65M5 STF42N65M5 STI42.
Order codes
VDS @ TJmax
RDS(on) max.
STB42N65M5
STF42N65M5
STI42N65M5
710 V
79 mΩ
STP42N65M5
STW42N65M5
• Extremely low RDS(on)
• Low gate charge and input capacitance
• Excellent switching performance
• 100% avalanche tested
Applications
• Switching applications
ID 33 A
Package D²PAK
TO-220FP I²PAK TO-220 TO-247
G(1) S(3)
AM01475v1_noZen
Description
These devices are N-channel Power MOSFETs based on the MDmesh M5 innovative vertical process technology combined with the well-known PowerMESH horizontal layout. The resulting products offer extremely low on-resistance, making the.
isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID=33A@ TC=25℃ ·Drain Source Voltage- : VDSS= 650V(Min) ·Stati.
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