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These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low onresistance, which is unmatched among siliconbased Power MOSFETs, making it especially suitable for applicati.
Type
STF16N65M5 STI16N65M5 STP16N65M5 STU16N65M5 STW16N65M5
VDSS @ TJmax
RDS(on) max
710 V < 0.279 Ω
■ Worldwide best RDS(on)
■ Higher VDSS rating
■ High dv/dt capability
■ Excellent switching performance
■ Easy to drive
■ 100% avalanche tested
ID 12 A
TAB
TAB
3 2 1
TO-220FP
123
I²PAK
3 2 1
TO-220
TAB
IPAK
3
2 1
3 2 1
TO-247
Figure 1. Internal schematic diagram
Applications
■ Switching applications
$ 4!"
Description
These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’.
STI16N65M5 - INCHANGE
isc N-Channel Mosfet Transistor ·FEATURES ·Drain Current ID= 12A@ TC=25℃ ·Drain Source Voltage- : VDSS= 650V(Min) ·Fast.
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