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- O S(3) This FDmesh II Power MOSFET with fast-recovery body diode is produced using t(s) AM01475v1_noZen MDmesh II technology. Utilizing a new strip-layout vertical structure, this device features low on-resistance and superior switching performance. It is ideal for bridge ctopologies and ZVS phase-shift converters. bsolete Produ Product status link O.
TAB
Order code
VDS at TJ max.
RDS(on) max.
ID
STI11NM60ND
650 V
450 mΩ
10 A
t(s) 1 2 3 uc I²PAK rod D(2, TAB)
• Fast-recovery body diode
• Low gate charge and input capacitance
•
Low on-resistance RDS(on)
• 100% avalanche tested
• High dv/dt ruggedness
te P Applications
le
• Switching applications so G(1)
b Description
- O S(3)
This FDmesh II Power MOSFET with fast-recovery body diode is produced using
t(s) AM01475v1_noZen
MDmesh II technology. Utilizing a new strip-layout vertical structure, this device features low on-resistance and superior switching performance. It is.
STI11NM60ND - INCHANGE
isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID= 6.3A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Sta.
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