These N-channel Power MOSFETs are developed using STMicroelectronics' revolutionary MDmesh™ technology, which associates the multiple drain process with the company's PowerMESH™ horizontal layout. These devices offer extremely low on-resistance, high dv/dt and excellent avalanche characteristics. Utilizing ST's proprietary strip technique, these Power MOSFET.
Order codes VDSS
RDS(on) max
RDS(on)
*Qg
ID
STB11NM80 STF11NM80 STI11NM80 800 V STP11NM80 STW11NM80
< 0.40 Ω
14Ω
*nC
11 A
■ Low input capacitance and gate charge
■ Low gate input resistance
■ Best RDS(on)
*Qg in the industry
Applications
■ Switching applications
Description
These N-channel Power MOSFETs are developed using STMicroelectronics' revolutionary MDmesh™ technology, which associates the multiple drain process with the company's PowerMESH™ horizontal layout. These devices offer extremely low on-resistance, high dv/dt and excellent avalanche characteristics. Utilizing ST's prop.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | STI11NM60ND |
STMicroelectronics |
N-Channel Power MOSFET | |
2 | STI11NM60ND |
INCHANGE |
N-Channel MOSFET | |
3 | STI100N10F7 |
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N-Channel Power MOSFET | |
4 | STI1010 |
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Single-chip worldwide iDTV processor | |
5 | STI10N62K3 |
STMicroelectronics |
N-channel Power MOSFET | |
6 | STI10NM60N |
STMicroelectronics |
N-channel Power MOSFET | |
7 | STI120NH03L |
ST Microelectronics |
N-CHANNEL POWER MOSFET | |
8 | STI12N65M5 |
STMicroelectronics |
N-Channel Power MOSFET | |
9 | STI12N65M5 |
INCHANGE |
N-Channel MOSFET | |
10 | STI12NM50N |
STMicroelectronics |
N-channel Power MOSFET | |
11 | STI13005-1 |
STMicroelectronics |
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12 | STI13NM60N |
STMicroelectronics |
N-CHANNEL Power MOSFET |