ucThis series of devices is realized with the second dgeneration of MDmesh™ technology. This rorevolutionary Power MOSFET associates a new Pvertical structure to the company’s strip layout to teyield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most Obsoledemanding high efficiency converters. 3 2 1 TO-220 3 1 D.
Type
VDSS (@Tjmax)
RDS(on) max
ID
STB12NM50N
t(s)STD12NM50N cSTI12NM50N uSTF12NM50N rodSTP12NM50N
550 V 550 V 550 V 550 V 550 V
0.38 Ω 0.38 Ω 0.38 Ω 0.38 Ω 0.38 Ω
11 A 11 A 11 A 11 A (1) 11 A
P
■ 100% avalanche tested te
■ Low input capacitance and gate charge le
■ Low gate input resistance
bsoApplication
- O
■ Switching applications
t(s)Description
ucThis series of devices is realized with the second dgeneration of MDmesh™ technology. This rorevolutionary Power MOSFET associates a new Pvertical structure to the company’s strip layout to teyield one of the world’s lowest on-resistance.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | STI12N65M5 |
STMicroelectronics |
N-Channel Power MOSFET | |
2 | STI12N65M5 |
INCHANGE |
N-Channel MOSFET | |
3 | STI120NH03L |
ST Microelectronics |
N-CHANNEL POWER MOSFET | |
4 | STI100N10F7 |
STMicroelectronics |
N-Channel Power MOSFET | |
5 | STI1010 |
STMicroelectronics |
Single-chip worldwide iDTV processor | |
6 | STI10N62K3 |
STMicroelectronics |
N-channel Power MOSFET | |
7 | STI10NM60N |
STMicroelectronics |
N-channel Power MOSFET | |
8 | STI11NM60ND |
STMicroelectronics |
N-Channel Power MOSFET | |
9 | STI11NM60ND |
INCHANGE |
N-Channel MOSFET | |
10 | STI11NM80 |
STMicroelectronics |
N-CHANNEL Power MOSFET | |
11 | STI13005-1 |
STMicroelectronics |
High voltage fast-switching NPN power transistor | |
12 | STI13NM60N |
STMicroelectronics |
N-CHANNEL Power MOSFET |