This series of devices is designed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. Table 1. Device summary Marking .
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Type
VDSS (@Tjmax) 550 V 550 V 550 V 550 V 550 V
RDS(on) max 0.26 Ω 0.26 Ω 0.26 Ω 0.26 Ω 0.26 Ω
ID
1
3
3 12
STB16NM50N STI16NM50N STF16NM50N STP16NM50N STW16NM50N
15 A 15 A 15 A (1)
D²PAK
2 1 3
I²PAK
15 A 15 A
3 1 2
TO-247
3 1 2
1. Limited only by maximum temperature allowed
■
■
■
100% avalanche tested Low input capacitance and gate charge Low gate input resistance
TO-220
TO-220FP
Figure 1.
Internal schematic diagram
Application
■
Switching applications
Description
This series of devices is designed using the second generation of MDmesh™ technology. Thi.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | STI16N65M5 |
STMicroelectronics |
N-channel Power MOSFET | |
2 | STI16N65M5 |
INCHANGE |
N-Channel MOSFET | |
3 | STI100N10F7 |
STMicroelectronics |
N-Channel Power MOSFET | |
4 | STI1010 |
STMicroelectronics |
Single-chip worldwide iDTV processor | |
5 | STI10N62K3 |
STMicroelectronics |
N-channel Power MOSFET | |
6 | STI10NM60N |
STMicroelectronics |
N-channel Power MOSFET | |
7 | STI11NM60ND |
STMicroelectronics |
N-Channel Power MOSFET | |
8 | STI11NM60ND |
INCHANGE |
N-Channel MOSFET | |
9 | STI11NM80 |
STMicroelectronics |
N-CHANNEL Power MOSFET | |
10 | STI120NH03L |
ST Microelectronics |
N-CHANNEL POWER MOSFET | |
11 | STI12N65M5 |
STMicroelectronics |
N-Channel Power MOSFET | |
12 | STI12N65M5 |
INCHANGE |
N-Channel MOSFET |