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bsThis STripFET™ DeepGATE™ Power MOSFET Otechnology is among the latest improvements, -which have been especially tailored to minimize )on-state resistance, with a new gate structure, t(sproviding superior switching performance. 2 3 1 H²PAK 3 3 2 1 TO-220 Figure 1. Internal schematic diagram $ duc ' Obsolete Pro 3 !-V Table 1. Device .
STH85N15F4-2 STP85N15F4
N-channel 150 V, 0.015 Ω, 85 A TO-220, H2PAK STripFET™ DeepGATE™ Power MOSFET
Preliminary data
Type
VDSS
RDS(on) max
ID
STH85N15F4-2
)STP85N15F4
150 V 150 V
< 18.6 mΩ < 19 mΩ
t(s
■ Extremely low on-resistance RDS(on) uc
■ 100% avalanche tested
85 A 85 A
rodApplication te P
■ Switching applications
oleDescription bsThis STripFET™ DeepGATE™ Power MOSFET Otechnology is among the latest improvements, -which have been especially tailored to minimize )on-state resistance, with a new gate structure, t(sproviding superior switching performance.
2
3 1
H²PAK
3
3 2 1
.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | STH80N10F7-2 |
STMicroelectronics |
N-CHANNEL POWER MOSFET |
|
| 2 | STH80N10F7-2 |
INCHANGE |
N-Channel MOSFET |
|
| 3 | STH80N10LF7-2AG |
STMicroelectronics |
N-CHANNEL POWER MOSFET |
|
| 4 | STH81002Z |
Siemens |
1550nm Laser in Coaxial TO-Package |
|
| 5 | STH8103 |
Semtron |
Hall Effect Switch |
|
| 6 | STH8N80 |
ST Microelectronics |
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS |
|
| 7 | STH8N80FI |
ST Microelectronics |
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS |
|
| 8 | STH8NA60 |
ST Microelectronics |
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR |
|
| 9 | STH8NA60FI |
ST Microelectronics |
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR |
|
| 10 | STH8NA80 |
ST Microelectronics |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS |
|
| 11 | STH8NA80FI |
ST Microelectronics |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS |
|
| 12 | STH8NB90 |
ST Microelectronics |
N-CHANNEL MOSFET |
|