STH81002Z 1550nm Laser in Coaxial TO-Package • • • • • • Designed for application in fiber-optic networks Laser Diode with Multi-Quantum Well structure Suitable for bit rates up to 1 Gbit/s Ternary photodiode at rear mirror for monitoring and control of radiant power Hermetically sealed subcomponent, similar to TO 18 with integrated Silicon-Optics for hig.
81002Z Characteristics All optical data refer to the optical port. Laser Diode Optical Output Power Emission wavelength center of range Φe =3 mW Spectral bandwidth Φe =3 mW (RMS) Threshold current Forward voltage Φe =3 mW Radiant power at threshold Slope Efficiency Differential series resistance Rise Time/Fall Time Symbol Φe λ ∆λ Ith VF Φeth η rS t R, t F Values >6 1510...1590 <5 < 15 < 1,5 < 200 > 200 <8 <1 Unit mW nm nm mA V µW mW/A Ω ns Monitor Diode Dark Current, VR =5V, Φe = 0 Photocurrent, Φe =3 mW Laser Diode Radiant Power in Singlemode Fibre www.DataSheet4U.com Symbol IR IP Values .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | STH8103 |
Semtron |
Hall Effect Switch | |
2 | STH80N10F7-2 |
STMicroelectronics |
N-CHANNEL POWER MOSFET | |
3 | STH80N10F7-2 |
INCHANGE |
N-Channel MOSFET | |
4 | STH80N10LF7-2AG |
STMicroelectronics |
N-CHANNEL POWER MOSFET | |
5 | STH85N15F4-2 |
STMicroelectronics |
N-CHANNEL POWER MOSFET | |
6 | STH8N80 |
ST Microelectronics |
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS | |
7 | STH8N80FI |
ST Microelectronics |
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS | |
8 | STH8NA60 |
ST Microelectronics |
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR | |
9 | STH8NA60FI |
ST Microelectronics |
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR | |
10 | STH8NA80 |
ST Microelectronics |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS | |
11 | STH8NA80FI |
ST Microelectronics |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS | |
12 | STH8NB90 |
ST Microelectronics |
N-CHANNEL MOSFET |