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® STW8NA60 STH8NA60FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE STW 8NA60 STH8NA60F I V DSS 600 V 600 V R DS(on) <1 Ω <1 Ω ID 8 A 5 A s s s s s s s TYPICAL RDS(on) = 0.92 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED REDUCED THRESHOLD VO.
e (DC) Storage Temperature Max. Operating Junction Temperature
o o
Unit
STH8NA60FI 600 600 ± 30 V V V 5 3.2 32 60 0.48 4000 A A A W W /o C V
o o
8 5.1 32 150 1.2 -65 to 150 150
C C
(
•) Pulse width limited by safe operating area
October 1998
1/10
STW8NA60-STH8NA60FI
THERMAL DATA
TO-247 R thj -case R thj -amb R thc-sink Tl Thermal Resistance Junction-case Max 0.83 30 0.1 300 ISOWATT 218 2.08
o o o
C/W C/W C/W o C
Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature F or Soldering Purpose
AVALANCHE CHARACTERISTICS
Symbo l IAR E AS Paramete.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | STH8NA60 |
ST Microelectronics |
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR |
|
| 2 | STH8NA80 |
ST Microelectronics |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS |
|
| 3 | STH8NA80FI |
ST Microelectronics |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS |
|
| 4 | STH8N80 |
ST Microelectronics |
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS |
|
| 5 | STH8N80FI |
ST Microelectronics |
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS |
|
| 6 | STH8NB90 |
ST Microelectronics |
N-CHANNEL MOSFET |
|
| 7 | STH8NB90FI |
ST Microelectronics |
N-CHANNEL MOSFET |
|
| 8 | STH80N10F7-2 |
STMicroelectronics |
N-CHANNEL POWER MOSFET |
|
| 9 | STH80N10F7-2 |
INCHANGE |
N-Channel MOSFET |
|
| 10 | STH80N10LF7-2AG |
STMicroelectronics |
N-CHANNEL POWER MOSFET |
|
| 11 | STH81002Z |
Siemens |
1550nm Laser in Coaxial TO-Package |
|
| 12 | STH8103 |
Semtron |
Hall Effect Switch |
|