Using the latest high voltage MESH OVERLAY ™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprieraty edge termination structure, gives the lowest R DS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate cha.
te Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Insulation Withstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature
ISOWATT218
INTERNAL SCHEMATIC DIAGRAM
Value STW8NB90 900 900 ±30 8 5 32 200 1.6 4
–65 to 150 150 2500 5 3 20 80 0.64 STH8NB90FI
Unit V V V A A A W W/°C V/ns V °C °C
(
•)Pulse width limited by safe operating area (1)ISD ≤8 A, di/dt ≤200A/µs, VDD ≤ V(BR)DSS, T j ≤ TJMAX.
July 2.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | STH8NB90FI |
ST Microelectronics |
N-CHANNEL MOSFET | |
2 | STH8N80 |
ST Microelectronics |
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS | |
3 | STH8N80FI |
ST Microelectronics |
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS | |
4 | STH8NA60 |
ST Microelectronics |
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR | |
5 | STH8NA60FI |
ST Microelectronics |
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR | |
6 | STH8NA80 |
ST Microelectronics |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS | |
7 | STH8NA80FI |
ST Microelectronics |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS | |
8 | STH80N10F7-2 |
STMicroelectronics |
N-CHANNEL POWER MOSFET | |
9 | STH80N10F7-2 |
INCHANGE |
N-Channel MOSFET | |
10 | STH80N10LF7-2AG |
STMicroelectronics |
N-CHANNEL POWER MOSFET | |
11 | STH81002Z |
Siemens |
1550nm Laser in Coaxial TO-Package | |
12 | STH8103 |
Semtron |
Hall Effect Switch |