STH8NA80FI - ST Microelectronics

STH8NA80FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS

This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance. APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWITCH MODE POWER SUPPLIES (SMPS) s DC.

Features

0 ± 30 o Unit V DS V DGR V GS ID ID I DM (
• ) P tot V ISO T s tg Tj Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω) G ate-source Voltage Drain Current (continuous) at Tc = 25 C Drain Current (continuous) at Tc = 100 C Drain Current (pulsed) T otal Dissipation at Tc = 25 oC Derating Factor Insulation W ithstand Voltage (DC) Storage T emperature Max. O perating Junct ion T emperature o V V V 4.5 2.8 28.8 70 0.56 4000 A A A W W/ oC V o o 7.2 4.5 28.8 175 1.4  -65 to 150 150 C C (
•) Pulse width limited by safe operating area October 1998 1/6 STW8NA80 STH8NA80FI THER.