This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance. APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWITCH MODE POWER SUPPLIES (SMPS) s DC.
0 ± 30
o
Unit
V DS V DGR V GS ID ID I DM (
• ) P tot V ISO T s tg Tj
Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω) G ate-source Voltage Drain Current (continuous) at Tc = 25 C Drain Current (continuous) at Tc = 100 C Drain Current (pulsed) T otal Dissipation at Tc = 25 oC Derating Factor Insulation W ithstand Voltage (DC) Storage T emperature Max. O perating Junct ion T emperature
o
V V V 4.5 2.8 28.8 70 0.56 4000 A A A W W/ oC V
o o
7.2 4.5 28.8 175 1.4 -65 to 150 150
C C
(
•) Pulse width limited by safe operating area
October 1998
1/6
STW8NA80 STH8NA80FI
THER.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | STH8NA80FI |
ST Microelectronics |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS | |
2 | STH8NA60 |
ST Microelectronics |
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR | |
3 | STH8NA60FI |
ST Microelectronics |
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR | |
4 | STH8N80 |
ST Microelectronics |
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS | |
5 | STH8N80FI |
ST Microelectronics |
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS | |
6 | STH8NB90 |
ST Microelectronics |
N-CHANNEL MOSFET | |
7 | STH8NB90FI |
ST Microelectronics |
N-CHANNEL MOSFET | |
8 | STH80N10F7-2 |
STMicroelectronics |
N-CHANNEL POWER MOSFET | |
9 | STH80N10F7-2 |
INCHANGE |
N-Channel MOSFET | |
10 | STH80N10LF7-2AG |
STMicroelectronics |
N-CHANNEL POWER MOSFET | |
11 | STH81002Z |
Siemens |
1550nm Laser in Coaxial TO-Package | |
12 | STH8103 |
Semtron |
Hall Effect Switch |