Micro Power, Ultra-Sensitive, Hall Effect Switch ■FEATURE STH8103 is a three-terminal Hall Effect sensor device with a output driver, mainly designed for battery–operation, hand-held equipment (such as Cellular and Cordless Phone, PDA). For STH8103, either north or South Pole of sufficient strength will turn the output on. The output will be turned off und.
TION
VDD VOUT
GND
TOP VIEW TSOT-23L
■PART NUMBER INFORMATION
STH8103XX- XX X
Lead Plating Code Handling Code Package Code
Lead Plating Code G : Lead-free product. This product is RoHS compliant
Handling Code TR : Tape&Reel
Package Code SS : TSOT-23L
STH8103 Rev.1.0 Copyright © Semtron Microtech Corp.
1
www.semtron-micro.com
■BLOCK DIAGRAM
VDD
STH8103
VOUT
■ORDERING INFORMATION
Part Number
Package Code
STH8103SS-TRG
SS
※ Year Code : 0 ~ 9 ※ Week Code : A ~ Z(1~26) ; a ~ z(27~52) ※ G : Lead-free product. This product is RoHS compliant.
Package TSOT-23L
GND
Shipping 3000 / Tap.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | STH81002Z |
Siemens |
1550nm Laser in Coaxial TO-Package | |
2 | STH80N10F7-2 |
STMicroelectronics |
N-CHANNEL POWER MOSFET | |
3 | STH80N10F7-2 |
INCHANGE |
N-Channel MOSFET | |
4 | STH80N10LF7-2AG |
STMicroelectronics |
N-CHANNEL POWER MOSFET | |
5 | STH85N15F4-2 |
STMicroelectronics |
N-CHANNEL POWER MOSFET | |
6 | STH8N80 |
ST Microelectronics |
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS | |
7 | STH8N80FI |
ST Microelectronics |
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS | |
8 | STH8NA60 |
ST Microelectronics |
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR | |
9 | STH8NA60FI |
ST Microelectronics |
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR | |
10 | STH8NA80 |
ST Microelectronics |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS | |
11 | STH8NA80FI |
ST Microelectronics |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS | |
12 | STH8NB90 |
ST Microelectronics |
N-CHANNEL MOSFET |