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This N-channel enhancement mode Power MOSFET benefits from the latest refinement of STMicroelectronics' unique “single feature size“ strip-based process, which decreases the critical alignment steps to offer exceptional manufacturing reproducibility. The result is a transistor with extremely high packing density for low on-resistance, rugged avalanche charac.
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3 1
DPAK
Figure 1. Internal schematic diagram
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Order code STD25NF20
VDS @ TJmax
200 V
RDS(on) max
0.125 Ω
ID 18 A
PTOT 110 W
• Designed for automotive applications and AEC-Q101 qualified
• Extremely low gate charge
• Exceptional dv/dt capability
• Low gate input resistance
• 100% avalanche tested
Applications
• Switching applications
Description
This N-channel enhancement mode Power MOSFET benefits from the latest refinement of STMicroelectronics' unique “single feature size“ strip-based process, which decreases the critical alignment steps to offer.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | STD25NF10 |
ST Microelectronics |
N-CHANNEL MOSFET |
|
| 2 | STD25NF10L |
ST Microelectronics |
N-CHANNEL MOSFET |
|
| 3 | STD25NF10LA |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 4 | STD25NF10LA |
STMicroelectronics |
N-CHANNEL MOSFET |
|
| 5 | STD25NF10LT4 |
STMicroelectronics |
N-channel MOSFET |
|
| 6 | STD25N03L |
SamHop Microelectronics |
N-Channel Enhancement Mode Field Effect Transistor |
|
| 7 | STD25N10F7 |
STMicroelectronics |
N-CHANNEL POWER MOSFET |
|
| 8 | STD25N10F7 |
INCHANGE |
N-Channel MOSFET |
|
| 9 | STD25NE03L |
ST Microelectronics |
N-CHANNEL MOSFET |
|
| 10 | STD253 |
Sirectifier |
Thyristor-Diode Modules |
|
| 11 | STD2555NL |
SamHop Microelectronics |
N-Channel Enhancement Mode Field Effect Transistor |
|
| 12 | STD2596 |
Semtron |
3A PWM Buck DC/DC Converter |
|