STD25NE03L - ST Microelectronics

STD25NE03L N-CHANNEL MOSFET

This Power MOSFET is the latest development of STMicroelectronics unique ”Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s HIGH CURRENT, HIGH SPE.

Features

arameter Drain-source Voltage (VGS = 0) Drain- gate Voltage (R GS = 20 k Ω ) Gate-source Voltage Drain Current (continuous) at Tc = 25 C Drain Current (continuous) at Tc = 100 C Drain Current (pulsed) Total Dissipation at T c = 25 C Derating F actor Storage T emperature Max. Operating Junction Temperature o o o Value 30 30 ± 20 20
*
* 18
*
* 100 45 0.3 -65 to 175 175 (
*
*) Value limited only by the package Unit V V V A A A W W /o C o o C C (
•) Pulse width limited by safe operating area March 1999 1/9 STD25NE03L THERMAL DATA R thj -case R thj -amb R thc-sink Tl Thermal Resistance Junction-cas.