·motor drive, DC-DC converter, power switch and solenoid drive. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 100 V VGS Gate-Source Voltage-Continuous ±16 V ID Drain Current-Continuous 25 A IDM Drain Current-Single Pluse 100 A PD Total Dissipation @TC=25℃ 100 W TJ Max. Operating Junction Tem.
·Drain Current : ID= 25A@ TC=25℃
·Drain Source Voltage
: VDSS= 100V(Min)
·Static Drain-Source On-Resistance
: RDS(on) = 35mΩ(Max) @ VGS= 10V
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
DESCRIPTION
·motor drive, DC-DC converter, power switch
and solenoid drive.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
100
V
VGS
Gate-Source Voltage-Continuous
±16
V
ID
Drain Current-Continuous
25
A
IDM
Drain Current-Single Pluse
100
A
PD
Total Dissipation @TC=25℃
100
W
TJ
Max. O.
This Power MOSFET has been developed using STMicroelectronics’ unique STripFET process, which is specifically designed t.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | STD25NF10L |
ST Microelectronics |
N-CHANNEL MOSFET | |
2 | STD25NF10LT4 |
STMicroelectronics |
N-channel MOSFET | |
3 | STD25NF10 |
ST Microelectronics |
N-CHANNEL MOSFET | |
4 | STD25NF20 |
STMicroelectronics |
Automotive-grade N-channel Power MOSFET | |
5 | STD25N03L |
SamHop Microelectronics |
N-Channel Enhancement Mode Field Effect Transistor | |
6 | STD25N10F7 |
STMicroelectronics |
N-CHANNEL POWER MOSFET | |
7 | STD25N10F7 |
INCHANGE |
N-Channel MOSFET | |
8 | STD25NE03L |
ST Microelectronics |
N-CHANNEL MOSFET | |
9 | STD253 |
Sirectifier |
Thyristor-Diode Modules | |
10 | STD2555NL |
SamHop Microelectronics |
N-Channel Enhancement Mode Field Effect Transistor | |
11 | STD2596 |
Semtron |
3A PWM Buck DC/DC Converter | |
12 | STD25P03L |
ON Semiconductor |
Power MOSFET |