STD/SDT253 Thyristor-Diode Modules, Diode-Thyristor Modules Dimensions in mm (1mm=0.0394") Type VRSM VDSM V STD/SDT253GK08 900 STD/SDT253GK12 1300 STD/SDT253GK14 1500 STD/SDT253GK16 1700 STD/SDT253GK18 1900 VRRM VDRM V 800 1200 1400 1600 1800 Symbol ITRMS, IFRMS TVJ=TVJM ITAVM, IFAVM TC=85oC; 180o sine TVJ=45oC VR=0 TVJ=TVJM VR=0 TVJ=45oC VR=0 TVJ=TVJM VR=0.
* International standard package
* Copper base plate
* Planar passivated chips
* Isolation voltage 3600 V~
APPLICATIONS
* Motor control
* Power converter
* Heat and temperature control for industrial furnaces and chemical processes
* Lighting control
* Contactless switches
ADVANTAGES
* Space and weight savings
* Simple mounting
* Improved temperature and power cycling
* Reduced protection circuits
Free Datasheet http://www.datasheet4u.com/
STD/SDT253
Thyristor-Diode Modules, Diode-Thyristor Modules
Fig. 1 Surge overload current ITSM, IFSM: Crest value, t: duration
Fig. 2 i2t versus time .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | STD2555NL |
SamHop Microelectronics |
N-Channel Enhancement Mode Field Effect Transistor | |
2 | STD2596 |
Semtron |
3A PWM Buck DC/DC Converter | |
3 | STD25N03L |
SamHop Microelectronics |
N-Channel Enhancement Mode Field Effect Transistor | |
4 | STD25N10F7 |
STMicroelectronics |
N-CHANNEL POWER MOSFET | |
5 | STD25N10F7 |
INCHANGE |
N-Channel MOSFET | |
6 | STD25NE03L |
ST Microelectronics |
N-CHANNEL MOSFET | |
7 | STD25NF10 |
ST Microelectronics |
N-CHANNEL MOSFET | |
8 | STD25NF10L |
ST Microelectronics |
N-CHANNEL MOSFET | |
9 | STD25NF10LA |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
10 | STD25NF10LA |
STMicroelectronics |
N-CHANNEL MOSFET | |
11 | STD25NF10LT4 |
STMicroelectronics |
N-channel MOSFET | |
12 | STD25NF20 |
STMicroelectronics |
Automotive-grade N-channel Power MOSFET |