This MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced highefficiency, high-frequency isolated DC-DC converters for Telecom and Computer applications. It is also intended for any applications with low gate .
ate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Single Pulse Avalanche Energy Storage Temperature Max. Operating Junction Temperature
Value 100 100 ± 16 25 25 100 100 0.67 20 450 -55 to 175
Unit V V V A A A W W/°C V/ns mJ °C
EAS (2) Tstg Tj
(
•) Pulse width limited by safe operating area. (
*) Current Limited by Package February 2003
(1) ISD ≤25A, di/dt ≤300A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX (2) Starting T j = 2.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | STD25NF10 |
ST Microelectronics |
N-CHANNEL MOSFET | |
2 | STD25NF10LA |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
3 | STD25NF10LA |
STMicroelectronics |
N-CHANNEL MOSFET | |
4 | STD25NF10LT4 |
STMicroelectronics |
N-channel MOSFET | |
5 | STD25NF20 |
STMicroelectronics |
Automotive-grade N-channel Power MOSFET | |
6 | STD25N03L |
SamHop Microelectronics |
N-Channel Enhancement Mode Field Effect Transistor | |
7 | STD25N10F7 |
STMicroelectronics |
N-CHANNEL POWER MOSFET | |
8 | STD25N10F7 |
INCHANGE |
N-Channel MOSFET | |
9 | STD25NE03L |
ST Microelectronics |
N-CHANNEL MOSFET | |
10 | STD253 |
Sirectifier |
Thyristor-Diode Modules | |
11 | STD2555NL |
SamHop Microelectronics |
N-Channel Enhancement Mode Field Effect Transistor | |
12 | STD2596 |
Semtron |
3A PWM Buck DC/DC Converter |