S T U/D25N03L S amHop Microelectronics C orp. J uly 11 , 2005 N-C hannel E nhancement Mode Field E ffect Transistor P R ODUC T S UMMAR Y V DS S www.DataSheet4U.com 30V F E AT UR E S ( m W ) Max ID 25A R DS (ON) S uper high dense cell design for low R DS (ON ). 21 @ V G S = 10V 32 @ V G S = 4.5V R ugged and reliable. TO251 and TO 252 P ackage. D D G .
CHAR ACTE R IS TICS (T A =25 C unless otherwise noted) Parameter 5 S ymbol BV DS S IDS S IGS S V GS (th) R DS (ON) ID(ON) gFS C IS S C OS S CRSS c Condition V GS = 0V, ID = 250uA V DS = 24V, V GS = 0V V GS = 20V, V DS = 0V V DS = V GS , ID = 250uA V GS =10V, ID =10A V GS =4.5V, ID= 6A V DS = 10V, V GS = 10V V DS = 10V, ID = 10A Min Typ C Max Unit 30 1 V uA 100 nA 1 1.7 17 25 20 16 OFF CHAR ACTE R IS TICS Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current www.DataSheet4U.com Gate-Body Leakage ON CHAR ACTE R IS TICS b Gate Threshold Voltage Drain-S ource On-S tate R esistance.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | STD25N10F7 |
STMicroelectronics |
N-CHANNEL POWER MOSFET | |
2 | STD25N10F7 |
INCHANGE |
N-Channel MOSFET | |
3 | STD25NE03L |
ST Microelectronics |
N-CHANNEL MOSFET | |
4 | STD25NF10 |
ST Microelectronics |
N-CHANNEL MOSFET | |
5 | STD25NF10L |
ST Microelectronics |
N-CHANNEL MOSFET | |
6 | STD25NF10LA |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
7 | STD25NF10LA |
STMicroelectronics |
N-CHANNEL MOSFET | |
8 | STD25NF10LT4 |
STMicroelectronics |
N-channel MOSFET | |
9 | STD25NF20 |
STMicroelectronics |
Automotive-grade N-channel Power MOSFET | |
10 | STD253 |
Sirectifier |
Thyristor-Diode Modules | |
11 | STD2555NL |
SamHop Microelectronics |
N-Channel Enhancement Mode Field Effect Transistor | |
12 | STD2596 |
Semtron |
3A PWM Buck DC/DC Converter |