STD25NF10 - ST Microelectronics

STD25NF10 N-CHANNEL MOSFET

This Power Mosfet series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency isolated DC-DC converters for Telecom and Computer application. It is also intended for any application with low gate charge driv.

Features

rrent (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Single Pulse Avalanche Energy Storage Temperature Operating Junction Temperature Value 100 100 ± 20 25 21 100 100 0.67 13 480
  –55 to 175 (1) I SD ≤35A, di/dt ≤300A/µs, VDD ≤ V (BR)DSS, Tj ≤ T JMAX. (2) Starting T j = 25°C, I D = 12.5A, VDD = 50V Unit V V V A A A W W/°C V/ns mJ °C (q) Pulse width limited by safe operating area (
*) Current Limited by Package May 2002 1/9 STD25NF10 THERMAL DATA Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Max Therm.