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isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on)≤8mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 100 VGS Gate.
·Static drain-source on-resistance:
RDS(on)≤8mΩ
·Enhancement mode:
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS
·Switching applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
100
VGS
Gate-Source Voltage
±20
ID
Drain Current-Continuous
80
IDM
Drain Current-Single Pulsed
320
PD
Total Dissipation @TC=25℃
120
Tj
Max. Operating Junction Temperature
175
Tstg
Storage Temperature
-55~175
UNIT V V A A W ℃ ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(j.
STD100N10F7 - STMicroelectronics
These N-channel Power MOSFETs utilize STripFET F7 technology with an enhanced trench gate structure that results in very.
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|---|---|---|---|---|
| 1 | STD100N10LF7AG |
STMicroelectronics |
N-CHANNEL POWER MOSFET |
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| 2 | STD100N03L |
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| 3 | STD100N03L-1 |
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| 4 | STD100N3LF3 |
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| 7 | STD100NH03L |
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