STD100NH03L - ST Microelectronics

STD100NH03L N-CHANNEL POWER MOSFET

The STD100NH03L utilizes the latest advanced design rules of ST’s proprietary STripFET™ technology. This is suitable fot the most demanding DC-DC converter application where high efficiency is to be achieved. INTERNAL SCHEMATIC DIAGRAM APPLICATIONS s SPECIFICALLY DESIGNED AND OPTIMISED FOR HIGH EFFICIENCY DC/DC CONVERTES Ordering Information SALES TYPE ST.

Features

urce Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Single Pulse Avalanche Energy Storage Temperature Max. Operating Junction Temperature Value 30 30 ± 20 60 60 240 100 0.66 700 -55 to 175 Unit V V V A A A W W/°C mJ °C 1/11 September 2003 STD100NH03L THERMAL DATA Rthj-case Rthj-amb Rthj-pcb Tl Thermal Resistance Junction-case Thermal Resistance Junction-ambient Thermal Resistance Junction-pcb(#) Maximum Lead Temperature For Soldering Purpose Max Max Max 1.5 100 43 275 °C/W °C/W °C/.