STD100N10F7 |
Part Number | STD100N10F7 |
Manufacturer | INCHANGE |
Description | isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on)≤8mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and re... |
Features |
·Static drain-source on-resistance: RDS(on)≤8mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 100 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 80 IDM Drain Current-Single Pulsed 320 PD Total Dissipation @TC=25℃ 120 Tj Max. Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j... |
Document |
STD100N10F7 Data Sheet
PDF 239.21KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
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1 | STD100N10F7 |
STMicroelectronics |
N-channel Power MOSFET | |
2 | STD100N10LF7AG |
STMicroelectronics |
N-CHANNEL POWER MOSFET | |
3 | STD100N03L |
STMicroelectronics |
N-CHANNEL MOSFET | |
4 | STD100N03L-1 |
STMicroelectronics |
N-CHANNEL MOSFET | |
5 | STD100N3LF3 |
ST Microelectronics |
N-channel Power MOSFET |