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The STD100NH02L utilizes the latest advanced design rules of ST’s proprietary STripFET™ technology. This is suitable fot the most demanding DC-DC converter application where high efficiency is to be achieved. INTERNAL SCHEMATIC DIAGRAM APPLICATIONS s SPECIFICALLY DESIGNED AND OPTIMISED FOR HIGH EFFICIENCY DC/DC CONVERTES ABSOLUTE MAXIMUM RATINGS Symbol Vs.
ing Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Single Pulse Avalanche Energy Storage Temperature Max. Operating Junction Temperature Value 30 24 24 ± 20 60 60 240 100 0.67 800 -55 to 175 Unit V V V V A A A W W/°C mJ °C September 2003 1/12 STD100NH02L THERMAL DATA Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Thermal Resistance Junction-ambient Maximum Lead Temperature For Soldering Purpose Ma.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | STD100NH02L-1 |
ST Microelectronics |
N-CHANNEL POWER MOSFET |
|
| 2 | STD100NH03L |
ST Microelectronics |
N-CHANNEL POWER MOSFET |
|
| 3 | STD100N03L |
STMicroelectronics |
N-CHANNEL MOSFET |
|
| 4 | STD100N03L-1 |
STMicroelectronics |
N-CHANNEL MOSFET |
|
| 5 | STD100N10F7 |
STMicroelectronics |
N-channel Power MOSFET |
|
| 6 | STD100N10F7 |
INCHANGE |
N-Channel MOSFET |
|
| 7 | STD100N10LF7AG |
STMicroelectronics |
N-CHANNEL POWER MOSFET |
|
| 8 | STD100N3LF3 |
ST Microelectronics |
N-channel Power MOSFET |
|
| 9 | STD100 |
Schneider |
Duct Temperature Sensor |
|
| 10 | STD100 |
Sirectifier Semiconductors |
Thyristor-Diode Modules |
|
| 11 | STD10100S |
JILIN SINO |
TRENCH SCHOTTKY BARRIER DIODE |
|
| 12 | STD10150C |
SANGDEST MICROELECTRONICS |
SCHOTTKY RECTIFIER |
|