Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
STD100-50 STD100-100 STD100-150 STD100-200 STD100-250 STD100-300 STD100-400 Probe NL mm mm (in) (in) 50 (1.97) 63 (2.48) 100 (3.94) 113 (4.45) 150 (5.9) 163 (6.42) 200 (7.87) 213 (8.39) 250 (9.84) 263 (10.35) 300 313 (11.81) (12.32) 400 413 (15.75) (16.26) Weight g (lb) 113 (0.25) 117 (0.26) 120 (0.26) 123 (0.27) 126 (0.28) 130 (0.29) 138 (.
Temperatures: Ambient. . . . . . . . . . . . . . . . . . min. -40°C (-40 °F) . . . . . . . . . . . . . . . . . . . . . . . .max. 130°C (266 °F) Operating. . . . . . . . . . . . . . . . . min. -40°C (-40 °F) . . . . . . . . . . . . . . . . . . . . . . . .max. 150°C (302 °F) Standards: EMC. . . . . . . . . . . . . . . . EN 50081-1, EN 50082-1
ACCURACY
At Temperature
–25 °C/
–13 °F ±0 °C/32 °F 25 °C/77 °F 50 °C/122 °F 75 °C/167 °F 100 °C/212 °F
Accuracy ±0.7 °C/±1.3 °F ±0.5 °C/±0.9 °F ±0.3 °C/±0.5 °F ±0.6 °C/±1.1 °F ±0.9 °C/±1.6 °F ±1.3 °C/±2.3 °F
Fi.
STD100 - Sirectifier Semiconductors
STD/SDT100 Thyristor-Diode Modules, Diode-Thyristor Modules Type VRSM VDSM V STD/SDT100GK08 900 STD/SDT100GK12 1300 STD/.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | STD100N03L |
STMicroelectronics |
N-CHANNEL MOSFET |
|
| 2 | STD100N03L-1 |
STMicroelectronics |
N-CHANNEL MOSFET |
|
| 3 | STD100N10F7 |
STMicroelectronics |
N-channel Power MOSFET |
|
| 4 | STD100N10F7 |
INCHANGE |
N-Channel MOSFET |
|
| 5 | STD100N10LF7AG |
STMicroelectronics |
N-CHANNEL POWER MOSFET |
|
| 6 | STD100N3LF3 |
ST Microelectronics |
N-channel Power MOSFET |
|
| 7 | STD100NH02L |
ST Microelectronics |
N-CHANNEL POWER MOSFET |
|
| 8 | STD100NH02L-1 |
ST Microelectronics |
N-CHANNEL POWER MOSFET |
|
| 9 | STD100NH03L |
ST Microelectronics |
N-CHANNEL POWER MOSFET |
|
| 10 | STD10100S |
JILIN SINO |
TRENCH SCHOTTKY BARRIER DIODE |
|
| 11 | STD10150C |
SANGDEST MICROELECTRONICS |
SCHOTTKY RECTIFIER |
|
| 12 | STD102S |
SamHop Microelectronics |
N-Channel MOSFET |
|