STD100N3LF3 - ST Microelectronics

STD100N3LF3 N-channel Power MOSFET

This Power MOSFET is the latest refinement of STMicroelectronics unique “Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics, low gate charge and less critical alignment steps therefore a remarkable manufacturing reproducibility. This new improved dev.

Features

Type STD100N3LF3 STU100N3LF3 VDSSS 30 V 30 V RDS(on) ID Pw 3 1 2 1 <0.0055 Ω 80 A(1) 110 W <0.0055 Ω 80 A(1) 110 W 3 1. Current limited by package
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■ 100% avalanche tested Logic level threshold DPAK IPAK Description This Power MOSFET is the latest refinement of STMicroelectronics unique “Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics, low gate charge and less critical alignment steps therefore a remarkable manufacturing reproducibility. This new improved device has been spec.